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UMG4N-7

UMG4N-7 Images
Part Number UMG4N-7
Manufacturer Diodes Incorporated
Description TRANS 2NPN PREBIAS 0.15W SOT353
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Datasheet UMG4N-7.pdf
In Stock 27202
Quantity 1 10 100 1000 10000
Unit Price 0.13950 0.132525 0.12555 0.118575 0.1116
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UMG4N-7 Specifications

Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) -
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package SOT-353
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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