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MUN5312DW1T2G

MUN5312DW1T2G Images
Part Number MUN5312DW1T2G
Manufacturer ON Semiconductor
Description TRANS NPN/PNP PREBIAS SOT363
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Datasheet MUN5312DW1T2G.pdf
In Stock 10966
Quantity 1 10 100 1000 10000
Unit Price 0.03502 0.033269 0.031518 0.029767 0.028016
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MUN5312DW1T2G Specifications

Part Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 385mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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