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MUN5211T1G

MUN5211T1G Images
Part Number MUN5211T1G
Manufacturer ON Semiconductor
Description TRANS PREBIAS NPN 310MW SC70-3
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Single, Pre-Biased
Series -
Datasheet MUN5211T1G.pdf
In Stock 11018
Quantity 1 10 100 1000 10000
Unit Price 0.02703 0.0256785 0.024327 0.0229755 0.021624
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MUN5211T1G Specifications

Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 202mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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