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SI3586DV-T1-GE3

SI3586DV-T1-GE3 Images
Part Number SI3586DV-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N/P-CH 20V 2.9A 6-TSOP
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI3586DV-T1-GE3.pdf
In Stock 9962
Quantity 1 10 100 1000 10000
Unit Price 20.7644 19.72618 18.68796 17.64974 16.61152
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SI3586DV-T1-GE3 Specifications

Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A, 2.1A
Rds On (Max) @ Id, Vgs 60 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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