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SI4500BDY-T1-GE3

SI4500BDY-T1-GE3 Images
Part Number SI4500BDY-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N/P-CH 20V 6.6A 8-SOIC
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI4500BDY-T1-GE3.pdf
In Stock 19768
Quantity 1 10 100 1000 10000
Unit Price 4.2089 3.998455 3.78801 3.577565 3.36712
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SI4500BDY-T1-GE3 Specifications

Part Status Obsolete
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.6A, 3.8A
Rds On (Max) @ Id, Vgs 20 mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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