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SI7909DN-T1-E3

SI7909DN-T1-E3 Images
Part Number SI7909DN-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET 2P-CH 12V 5.3A 1212-8
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI7909DN-T1-E3.pdf
In Stock 22885
Quantity 1 10 100 1000 10000
Unit Price 6.4495 6.127025 5.80455 5.482075 5.1596
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SI7909DN-T1-E3 Specifications

Part Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 37 mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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