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SI3911DV-T1-E3

SI3911DV-T1-E3 Images
Part Number SI3911DV-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET 2P-CH 20V 1.8A 6TSOP
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI3911DV-T1-E3.pdf
In Stock 11958
Quantity 1 10 100 1000 10000
Unit Price 3.7724 3.58378 3.39516 3.20654 3.01792
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SI3911DV-T1-E3 Specifications

Part Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.8A
Rds On (Max) @ Id, Vgs 145 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
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