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SI1958DH-T1-E3

SI1958DH-T1-E3 Images
Part Number SI1958DH-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 20V 1.3A SC70-6
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI1958DH-T1-E3.pdf
In Stock 26031
Quantity 1 10 100 1000 10000
Unit Price 28.2139 26.803205 25.39251 23.981815 22.57112
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SI1958DH-T1-E3 Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 205 mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 10V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6 (SOT-363)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
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