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SI1917EDH-T1-E3

SI1917EDH-T1-E3 Images
Part Number SI1917EDH-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET 2P-CH 12V 1A SC70-6
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI1917EDH-T1-E3.pdf
In Stock 6976
Quantity 1 10 100 1000 10000
Unit Price 20.5812 19.55214 18.52308 17.49402 16.46496
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SI1917EDH-T1-E3 Specifications

Part Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 1A
Rds On (Max) @ Id, Vgs 370 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 570mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6 (SOT-363)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
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