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SIF912EDZ-T1-E3

SIF912EDZ-T1-E3 Images
Part Number SIF912EDZ-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 30V 7.4A 6-POWERPAK
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SIF912EDZ-T1-E3.pdf
In Stock 15551
Quantity 1 10 100 1000 10000
Unit Price 1.1536 1.09592 1.03824 0.98056 0.92288
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SIF912EDZ-T1-E3 Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.4A
Rds On (Max) @ Id, Vgs 19 mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.6W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 2x5
Supplier Device Package PowerPAK® (2x5)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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