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SI1912EDH-T1-E3

SI1912EDH-T1-E3 Images
Part Number SI1912EDH-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 20V 1.13A SC70-6
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI1912EDH-T1-E3.pdf
In Stock 28712
Quantity 1 10 100 1000 10000
Unit Price 20.4357 19.413915 18.39213 17.370345 16.34856
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SI1912EDH-T1-E3 Specifications

Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.13A
Rds On (Max) @ Id, Vgs 280 mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 570mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6 (SOT-363)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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