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DMG6602SVT-7

DMG6602SVT-7 Images
Part Number DMG6602SVT-7
Manufacturer Diodes Incorporated
Description MOSFET N/P-CH 30V TSOT23-6
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series -
Datasheet DMG6602SVT-7.pdf
In Stock 13183
Quantity 1 10 100 1000 10000
Unit Price 0.09240 0.08778 0.08316 0.07854 0.07392
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DMG6602SVT-7 Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.8A
Rds On (Max) @ Id, Vgs 60 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Power - Max 840mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-23-6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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