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SI9933CDY-T1-GE3

SI9933CDY-T1-GE3 Images
Part Number SI9933CDY-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET 2P-CH 20V 4A 8-SOIC
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI9933CDY-T1-GE3.pdf
In Stock 9998
Quantity 1 10 100 1000 10000
Unit Price 0.24360 0.23142 0.21924 0.20706 0.19488
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SI9933CDY-T1-GE3 Specifications

Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 58 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 10V
Power - Max 3.1W
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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