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SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3 Images
Part Number SIA910EDJ-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 12V 4.5A SC-70-6
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SIA910EDJ-T1-GE3.pdf
In Stock 19275
Quantity 1 10 100 1000 10000
Unit Price 0.22838 0.216961 0.205542 0.194123 0.182704
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SIA910EDJ-T1-GE3 Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 28 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 6V
Power - Max 7.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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