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SI4599DY-T1-GE3

SI4599DY-T1-GE3 Images
Part Number SI4599DY-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N/P-CH 40V 6.8A 8SOIC
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI4599DY-T1-GE3.pdf
In Stock 12757

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SI4599DY-T1-GE3 Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 6.8A, 5.8A
Rds On (Max) @ Id, Vgs 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 20V
Power - Max 3W, 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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