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SI7942DP-T1-GE3

SI7942DP-T1-GE3 Images
Part Number SI7942DP-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 100V 3.8A PPAK SO-8
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series TrenchFET®
Datasheet SI7942DP-T1-GE3.pdf
In Stock 7755
Quantity 1 10 100 1000 10000
Unit Price 1.10140 1.04633 0.99126 0.93619 0.88112
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SI7942DP-T1-GE3 Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.8A
Rds On (Max) @ Id, Vgs 49 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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