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HGT1S10N120BNS

HGT1S10N120BNS Images
Part Number HGT1S10N120BNS
Manufacturer Fairchild/ON Semiconductor
Description IGBT 1200V 35A 298W TO263AB
Category Discrete Semiconductor Products
Family Transistors - IGBTs - Single
Series -
Datasheet HGT1S10N120BNS.pdf
In Stock 13701
Quantity 1 10 100 1000 10000
Unit Price 3.07598 2.922181 2.768382 2.614583 2.460784
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HGT1S10N120BNS Specifications

Part Status Not For New Designs
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Current - Collector Pulsed (Icm) 80A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 298W
Switching Energy 320µJ (on), 800µJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Test Condition 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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