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SI4427BDY-T1-GE3

SI4427BDY-T1-GE3 Images
Part Number SI4427BDY-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET P-CH 30V 9.7A 8SOIC
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Series TrenchFET®
Datasheet SI4427BDY-T1-GE3.pdf
In Stock 25570
Quantity 1 10 100 1000 10000
Unit Price 0.83632 0.794504 0.752688 0.710872 0.669056
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SI4427BDY-T1-GE3 Specifications

Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Rds On (Max) @ Id, Vgs 10.5 mOhm @ 12.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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