| Part Number | SI5457DC-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Description | MOSFET P-CH 20V 6A CHIPFET |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Datasheet | SI5457DC-T1-GE3.pdf |
| In Stock | 21251 |
| Quantity | 1 | 10 | 100 | 1000 | 10000 |
|---|---|---|---|---|---|
| Unit Price |
Checking SI5457DC-T1-GE3 at chip-components.com. SI5457DC-T1-GE3 is available for sale, New and original, High quality SI5457DC-T1-GE3 In Stock for Sale, Check stock quantity and pricing, view product specifications, and order online.The price and lead time for SI5457DC-T1-GE3 depending on the quantity required,Please send your request to us, Our sales team will provide you price and delivery in 24hours,We sincerely look forward to cooperating with you. Email:sales@chip-components.com
| Part Status | Active |
|---|---|
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 5.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 4.9A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 1206-8 ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
| RFQ Email | sales@chip-components.com or Inquires online |
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