| Part Number | SIE808DF-T1-E3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Description | MOSFET N-CH 20V 60A 10-POLARPAK |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Datasheet | SIE808DF-T1-E3.pdf |
| In Stock | 8125 |
| Quantity | 1 | 10 | 100 | 1000 | 10000 |
|---|---|---|---|---|---|
| Unit Price |
Checking SIE808DF-T1-E3 at chip-components.com. SIE808DF-T1-E3 is available for sale, New and original, High quality SIE808DF-T1-E3 In Stock for Sale, Check stock quantity and pricing, view product specifications, and order online.The price and lead time for SIE808DF-T1-E3 depending on the quantity required,Please send your request to us, Our sales team will provide you price and delivery in 24hours,We sincerely look forward to cooperating with you. Email:sales@chip-components.com
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800pF @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 10-PolarPAK® (L) |
| Package / Case | 10-PolarPAK® (L) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
| RFQ Email | sales@chip-components.com or Inquires online |
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