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IRFB9N65APBF

IRFB9N65APBF Images
Part Number IRFB9N65APBF
Manufacturer Vishay Siliconix
Description MOSFET N-CH 650V 8.5A TO-220AB
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Series -
Datasheet IRFB9N65APBF.pdf
In Stock 28650
Quantity 1 10 100 1000 10000
Unit Price 2.85000 2.7075 2.565 2.4225 2.28
Since the price has fluctuated greatly from last year to the present, the price only for reference. If you need the best price, please send an email to sales@chip-components.com Thank you

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IRFB9N65APBF Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1417pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Rds On (Max) @ Id, Vgs 930 mOhm @ 5.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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