IPW60R190C6

Part Number	IPW60R190C6
Manufacturer	Infineon Technologies
Description	MOSFET N-CH 600V 20.2A TO247
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Series	CoolMOS™
Datasheet	IPW60R190C6.pdf
In Stock	14976

Quantity	1	10	100	1000	10000
Unit Price	~~19.4008~~	~~18.43076~~	~~17.46072~~	~~16.49068~~	~~15.52064~~

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IPW60R190C6 Specifications

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 100V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	151W (Tc)
Rds On (Max) @ Id, Vgs	190 mOhm @ 9.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.
RFQ Email	sales@chip-components.com or Inquires online

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