Part Number | SIHG47N65E-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Description | MOSFET N-CH 650V 47A TO-247AC |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Series | - |
Datasheet | SIHG47N65E-GE3.pdf |
In Stock | 16255 |
Quantity | 1 | 10 | 100 | 1000 | 10000 |
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Unit Price |
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Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 273nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5682pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 417W (Tc) |
Rds On (Max) @ Id, Vgs | 72 mOhm @ 24A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
RFQ Email | sales@chip-components.com or Inquires online |
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