IPD30N03S4L-09

Part Number	IPD30N03S4L-09
Manufacturer	Infineon Technologies
Description	MOSFET N-CH 30V 30A TO252-3
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Series	OptiMOS™
Datasheet	IPD30N03S4L-09.pdf
In Stock	22856

Quantity	1	10	100	1000	10000
Unit Price	~~14.1497~~	~~13.442215~~	~~12.73473~~	~~12.027245~~	~~11.31976~~

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IPD30N03S4L-09 Specifications

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1520pF @ 15V
Vgs (Max)	±16V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Rds On (Max) @ Id, Vgs	9 mOhm @ 30A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.
RFQ Email	sales@chip-components.com or Inquires online

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