| Part Number | BSS806N H6327 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 20V 2.3A SOT23 |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS™ |
| Datasheet | BSS806N H6327.pdf |
| In Stock | 22039 |
| Quantity | 1 | 10 | 100 | 1000 | 10000 |
|---|---|---|---|---|---|
| Unit Price |
Checking BSS806N H6327 at chip-components.com. BSS806N H6327 is available for sale, New and original, High quality BSS806N H6327 In Stock for Sale, Check stock quantity and pricing, view product specifications, and order online.The price and lead time for BSS806N H6327 depending on the quantity required,Please send your request to us, Our sales team will provide you price and delivery in 24hours,We sincerely look forward to cooperating with you. Email:sales@chip-components.com
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 2.5V |
| Vgs(th) (Max) @ Id | 750mV @ 11µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 2.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 529pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 57 mOhm @ 2.3A, 2.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
| RFQ Email | sales@chip-components.com or Inquires online |
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