NTMS10P02R2G

Part Number	NTMS10P02R2G
Manufacturer	ON Semiconductor
Description	MOSFET P-CH 20V 8.8A 8-SOIC
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Series	-
Datasheet	NTMS10P02R2G.pdf
In Stock	28662

Quantity	1	10	100	1000	10000
Unit Price	~~0.68326~~	~~0.649097~~	~~0.614934~~	~~0.580771~~	~~0.546608~~

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NTMS10P02R2G Specifications

Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	3640pF @ 16V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Rds On (Max) @ Id, Vgs	14 mOhm @ 10A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.
RFQ Email	sales@chip-components.com or Inquires online

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