IRLD120PBF

Part Number	IRLD120PBF
Manufacturer	Vishay Siliconix
Description	MOSFET N-CH 100V 1.3A 4-DIP
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Series	-
Datasheet	IRLD120PBF.pdf
In Stock	7484

Quantity	1	10	100	1000	10000
Unit Price	~~0.75000~~	~~0.7125~~	~~0.675~~	~~0.6375~~	~~0.6~~

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IRLD120PBF Specifications

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Vgs (Max)	±10V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Rds On (Max) @ Id, Vgs	270 mOhm @ 780mA, 5V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.
RFQ Email	sales@chip-components.com or Inquires online

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