IRF630NLPBF

Part Number	IRF630NLPBF
Manufacturer	Infineon Technologies
Description	MOSFET N-CH 200V 9.3A TO-262
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Series	HEXFET®
Datasheet	IRF630NLPBF.pdf
In Stock	7217

Quantity	1	10	100	1000	10000
Unit Price	~~11.8045~~	~~11.214275~~	~~10.62405~~	~~10.033825~~	~~9.4436~~

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IRF630NLPBF Specifications

Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	9.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	575pF @ 25V
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	82W (Tc)
Rds On (Max) @ Id, Vgs	300 mOhm @ 5.4A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.
RFQ Email	sales@chip-components.com or Inquires online

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