| Part Number | SI3456BDV-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Description | MOSFET N-CH 30V 4.5A 6-TSOP |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Datasheet | SI3456BDV-T1-GE3.pdf |
| In Stock | 29398 |
| Quantity | 1 | 10 | 100 | 1000 | 10000 |
|---|---|---|---|---|---|
| Unit Price |
Checking SI3456BDV-T1-GE3 at chip-components.com. SI3456BDV-T1-GE3 is available for sale, New and original, High quality SI3456BDV-T1-GE3 In Stock for Sale, Check stock quantity and pricing, view product specifications, and order online.The price and lead time for SI3456BDV-T1-GE3 depending on the quantity required,Please send your request to us, Our sales team will provide you price and delivery in 24hours,We sincerely look forward to cooperating with you. Email:sales@chip-components.com
| Part Status | Obsolete |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
| RFQ Email | sales@chip-components.com or Inquires online |
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