| Part Number | SI2331DS-T1-E3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Description | MOSFET P-CH 12V 3.2A SOT23-3 |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Series | TrenchFET® |
| Datasheet | SI2331DS-T1-E3.pdf |
| In Stock | 17287 |
| Quantity | 1 | 10 | 100 | 1000 | 10000 |
|---|---|---|---|---|---|
| Unit Price |
Checking SI2331DS-T1-E3 at chip-components.com. SI2331DS-T1-E3 is available for sale, New and original, High quality SI2331DS-T1-E3 In Stock for Sale, Check stock quantity and pricing, view product specifications, and order online.The price and lead time for SI2331DS-T1-E3 depending on the quantity required,Please send your request to us, Our sales team will provide you price and delivery in 24hours,We sincerely look forward to cooperating with you. Email:sales@chip-components.com
| Part Status | Obsolete |
|---|---|
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 6V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 710mW (Ta) |
| Rds On (Max) @ Id, Vgs | 48 mOhm @ 3.6A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
| RFQ Email | sales@chip-components.com or Inquires online |
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