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IPD60R600E6

IPD60R600E6 Images
Part Number IPD60R600E6
Manufacturer Infineon Technologies
Description MOSFET N-CH 600V 7.3A TO252
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Series CoolMOS™
Datasheet IPD60R600E6.pdf
In Stock 29116
Quantity 1 10 100 1000 10000
Unit Price 0.55006 0.522557 0.495054 0.467551 0.440048
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IPD60R600E6 Specifications

Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 63W (Tc)
Rds On (Max) @ Id, Vgs 600 mOhm @ 2.4A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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