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MJD112T4

MJD112T4 Images
Part Number MJD112T4
Manufacturer STMicroelectronics
Description TRANS NPN DARL 100V 2A DPAK
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Single
Series -
Datasheet MJD112T4.pdf
In Stock 23345
Quantity 1 10 100 1000 10000
Unit Price 0.60000 0.57 0.54 0.51 0.48
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MJD112T4 Specifications

Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 20W
Frequency - Transition 25MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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