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BSM180D12P3C007

BSM180D12P3C007 Images
Part Number BSM180D12P3C007
Manufacturer ROHM Semiconductor
Description SIC POWER MODULE
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series -
Datasheet BSM180D12P3C007.pdf
In Stock 24978
Quantity 1 10 100 1000 10000
Unit Price 563.26000 535.097 506.934 478.771 450.608
Since the price has fluctuated greatly from last year to the present, the price only for reference. If you need the best price, please send an email to sales@chip-components.com Thank you

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BSM180D12P3C007 Specifications

Series -
Package Bulk
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Power - Max 880W
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Package / Case Module
Supplier Device Package Module
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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