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BSO615CGHUMA1

BSO615CGHUMA1 Images
Part Number BSO615CGHUMA1
Manufacturer Infineon Technologies
Description PFET, 3.1A I(D), 60V, 0.11OHM, 2
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series -
Datasheet BSO615CGHUMA1.pdf
In Stock 17811
Quantity 1 10 100 1000 10000
Unit Price 0.27000 0.2565 0.243 0.2295 0.216
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BSO615CGHUMA1 Specifications

Series SIPMOS®
Package Bulk
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA, 2V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 22.5nC, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF, 460pF @ 25V
Power - Max 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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