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FJV3109RMTF

FJV3109RMTF Images
Part Number FJV3109RMTF
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description TRANS PREBIAS NPN 200MW SOT23-3
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Single, Pre-Biased
Series -
Datasheet FJV3109RMTF.pdf
In Stock 20487
Quantity 1 10 100 1000 10000
Unit Price 20.1961 19.186295 18.17649 17.166685 16.15688
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FJV3109RMTF Specifications

Series -
Package Tape & Reel (TR)
Part Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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