| Part Number | IPD60R650CEATMA1 |
|---|---|
| Manufacturer | IR (Infineon Technologies) |
| Description | MOSFET N-CH 600V 7A TO252-3 |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Series | - |
| Datasheet | IPD60R650CEATMA1.pdf |
| In Stock | 13900 |
| Quantity | 1 | 10 | 100 | 1000 | 10000 |
|---|---|---|---|---|---|
| Unit Price |
Checking IPD60R650CEATMA1 at chip-components.com. IPD60R650CEATMA1 is available for sale, New and original, High quality IPD60R650CEATMA1 In Stock for Sale, Check stock quantity and pricing, view product specifications, and order online.The price and lead time for IPD60R650CEATMA1 depending on the quantity required,Please send your request to us, Our sales team will provide you price and delivery in 24hours,We sincerely look forward to cooperating with you. Email:sales@chip-components.com
| Series | CoolMOS™ CE |
|---|---|
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
| RFQ Email | sales@chip-components.com or Inquires online |
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