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IPG20N06S2L65AATMA1

IPG20N06S2L65AATMA1 Images
Part Number IPG20N06S2L65AATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET 2N-CH 55V 20A 8TDSON
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Series -
Datasheet IPG20N06S2L65AATMA1.pdf
In Stock 11401
Quantity 1 10 100 1000 10000
Unit Price 0.98000 0.931 0.882 0.833 0.784
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IPG20N06S2L65AATMA1 Specifications

Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 25V
Power - Max 43W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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