| Part Number | SI4435DYPBF |
|---|---|
| Manufacturer | IR (Infineon Technologies) |
| Description | MOSFET P-CH 30V 8A 8SO |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Series | - |
| Datasheet | SI4435DYPBF.pdf |
| In Stock | 26159 |
| Quantity | 1 | 10 | 100 | 1000 | 10000 |
|---|---|---|---|---|---|
| Unit Price |
Checking SI4435DYPBF at chip-components.com. SI4435DYPBF is available for sale, New and original, High quality SI4435DYPBF In Stock for Sale, Check stock quantity and pricing, view product specifications, and order online.The price and lead time for SI4435DYPBF depending on the quantity required,Please send your request to us, Our sales team will provide you price and delivery in 24hours,We sincerely look forward to cooperating with you. Email:sales@chip-components.com
| Series | HEXFET® |
|---|---|
| Package | Tube |
| Part Status | Discontinued at Digi-Key |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
| RFQ Email | sales@chip-components.com or Inquires online |
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