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MUN5116DW1T1G

MUN5116DW1T1G Images
Part Number MUN5116DW1T1G
Manufacturer ON Semiconductor
Description TRANS 2PNP PREBIAS 0.25W SOT363
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Datasheet MUN5116DW1T1G.pdf
In Stock 12830
Quantity 1 10 100 1000 10000
Unit Price 0.03128 0.029716 0.028152 0.026588 0.025024
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MUN5116DW1T1G Specifications

Part Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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