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EMG8T2R

EMG8T2R Images
Part Number EMG8T2R
Manufacturer Rohm Semiconductor
Description TRANS 2NPN PREBIAS 0.15W EMT5
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Datasheet EMG8T2R.pdf
In Stock 24727
Quantity 1 10 100 1000 10000
Unit Price 0.09690 0.092055 0.08721 0.082365 0.07752
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EMG8T2R Specifications

Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 6-SMD (5 Leads), Flat Lead
Supplier Device Package EMT5
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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