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EMH6T2R

EMH6T2R Images
Part Number EMH6T2R
Manufacturer Rohm Semiconductor
Description TRANS 2NPN PREBIAS 0.15W EMT6
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series -
Datasheet EMH6T2R.pdf
In Stock 21820
Quantity 1 10 100 1000 10000
Unit Price 0.09690 0.092055 0.08721 0.082365 0.07752
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EMH6T2R Specifications

Part Status Not For New Designs
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.
RFQ Email sales@chip-components.com or Inquires online

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